Sudhanshu Choudhary

Courses taught at UND:

Spring 2025:

EE321 Electronics-I

EE316 Electric and Magnetic Fields

EE421 Electronics-II

EE524 ASIC Design (Application Specific Integrated Circuit Design)

Fall 2024:

EE316 Electric and Magnetic Fields

EE321 Electronics-I

ENGR206 Fundamentals of Electrical Engineering 

EECS590 Advanced EE and CS Problems 

Spring 2024:

EE101  Introduction to Electrical Engineering

EE316 Electric and Magnetic Fields

EE421 Electronics-II

EE524 ASIC Design (Application Specific Integrated Circuit Design)

Fall 2023:

EE321 Electronics-I

EE313 Linear Electric Circuits

EECS590 Advanced EE and CS Problems 

EE101  Introduction to Electrical Engineering

Spring 2023:

EE316 Electric and Magnetic Fields

EE421 Electronics-II

EE524 ASIC Design (Application Specific Integrated Circuit Design)

Courses taught elsewhere:

Digital Integrated Circuit Design (Post Graduate, 9 semesters)
Digital Design with FPGAs and VHDL/Verilog
Analog Electronics (Under Graduate, 2 semesters)
Semiconductor Device and Circuits (Under Graduate, 4 semesters)
Basic Electronics (Undergraduate, 4 semesters)
Digital Logic Design (Undergraduate, 4 semesters)
VLSI Fabrication (Undergraduate, 4 semesters)
CMOS VLSI Circuits Design (Undergraduate, 4 semesters)
Circuit Theory (Undergraduate, 5 semesters)
Microelectronics and VLSI Design (Under Graduate, 2 semesters)
Hardware Description Language Verilog/VHDL (Undergraduate, 4 semesters)
Microprocessor 8085/8086 programming
Computer architecture
Data Structures (Undergraduate, 2 semesters)
C Programming (Undergraduate, 2 semesters)
Operating Systems (Undergraduate, 2 semesters)
Mixed Signal Integrated Circuits (Post Graduate, 4 semesters)
Nanotechnology (Undergraduate, 2 semesters)
Embedded System Software Development (Post Graduate, 4 semesters)
Real Time Systems (Post Graduate, 4 semesters)

Research Areas:

Microelectronics; Semiconductor Devices and circuits; VLSI Design; Nanotechnology & Nanoelectronics; Analog and Digital integrated circuit design; Quantum devices and quantum information processing systems, Graphene and Carbon Nano Tube based electronic devices, Solar Cells, Magnetic Random Access Memory (MRAM)

Summary of Research:

Sudhanshu Choudhary's research focuses on various topics including spin transport, solar energy conversion, and magnetic tunnel junctions. Some of his most recent research focuses on phosphorene, mercury cadmium telluride and molybdenum disulfide for use in solar energy applications. Here is a summary of some of his important contributions in research highlighting the importance, uniqueness and impact of the research done:

Understanding the transport properties of materials is crucial for designing new technologies and optimizing the existing ones. In the field of nanotechnology, silicon carbide nanotubes (SiCNTs) are particularly interesting due to their potential applications in nanoelectronics and other fields. However, pristine SiCNTs often exhibit semiconducting behavior, limiting their conductivity. Here's where theoretical studies on BN co-doped SiC nanotubes come in. Doping is done for Tailored Conductivity by incorporating Boron (B) and Nitrogen (N) atoms into the SiCNT structure, which can manipulate a material’s electronic properties. These studies help predict how the position and density of these dopant atoms affect the conductivity of the nanotube. The findings from these theoretical studies guide towards the development of new SiC nanotube materials with desired electrical conductivity. This leads to SiC-based nanoelectronic devices with improved performance. These studies also provide insights into the fundamental interactions between the dopant atoms and the SiC lattice. This deeper knowledge can aid in the development of more accurate models for predicting the behavior of other doped nanomaterials. Overall, theoretical studies on transport properties of BN co-doped SiC nanotubes hold significant importance for rational design of novel nanoelectronic devices, in understanding the influence of dopants on material properties and in developing more accurate models for nanomaterial behavior. The unique ability to precisely control conductivity and create tailored electronic states through this co-doping strategy paves the way for groundbreaking advancements in nanotechnology and beyond. The applications of B-N doped carbon materials in Sensing, Supercapacitors, Electrochemical Catalysis and Li-Ion batteries is being heavily explored by the scientists all over the world.

MoS2/HgCdTe (Mercury Cadmium Telluride) heterostructures have gained interest for solar cell applications due to the enhanced light absorption they offer. This improved light absorption is important in increasing the solar cell efficiency. Solar cells rely on absorbing sunlight to generate electricity. MoS2 efficiently absorbs sunlight in the ultraviolet and blue regions, but its absorption drops off in the visible spectrum. HgCdTe is effective in the infrared region. By combining them, the heterostructure captures a wider range of sunlight, leading to potentially higher solar cell efficiency. MoS2, while a promising solar cell material, has limitations in its light absorption range. The enhanced absorption in the MoS2/HgCdTe heterostructure addresses this, potentially increasing the overall power output of the solar cell. By adjusting the thickness and composition of each layer, absorption spectrum of the MoS2/HgCdTe heterostructure can be tailored. This allows for optimizing light capture for specific regions of the solar spectrum, potentially leading to more efficient solar cells under different lighting conditions. Traditional solar cell materials like silicon can be expensive or have limitations in efficiency. MoS2/HgCdTe heterostructures offer a promising new approach for developing high-performance solar cells. Companies like First Solar are using this CdTe material in solar cells. Funding is also currently available from department of energy, united states for research proposals on improving the efficiency of CdTe based solar cells.

It's important to note that the environmental impact of using Mercury Cadmium Telluride needs to be carefully considered. The uniqueness of the absorption properties in MoS2/HgCdTe heterostructures for solar cells stems from the way these two materials complement each other. This uniqueness translates to benefits like enhanced solar cell efficiency by capturing a wider range of sunlight. MoS2/HgCdTe heterostructures have a significant impact on solar cell technology, potentially leading to significant improvement in solar cell efficiency compared to traditional single-absorber designs. This unique approach to light absorption paves the way for the development of highly efficient and potentially lower-cost solar cells. It offers an alternative to traditional materials like silicon, opening doors for innovation in solar cell technology.

Solar energy conversion relies on materials that can absorb light across the visible spectrum,roughly between 400 and 780 nanometers. This is because this range of light carries the most energy from the sun. TMDs (Transition metal dichalcogenides) and phosphorene by themselves absorb some visible light, but not very efficiently across the entire range. The unique layered structure of both TMDs and phosphorene can lead to efficient light trapping within the material. When light enters the heterostructure, it can bounce between the layers, increasing the chance of it being absorbed before it exits the material. This light trapping mechanism can further enhance the overall light absorption efficiency compared to traditional materials. The heterostructure exhibit a phenomenon called redshift where the absorption peaks are shifted towards the red end of the visible spectrum, leading to increased absorption across the desired range. Broader light absorption translates to more solar energy captured by the material. By combining specific TMDs with phosphorene, researchers can tailor the heterostructure to absorb light across a desired range within the visible spectrum. This level of tunability allows for optimization towards specific parts of the solar spectrum that silicon solar cells, for instance, might underperform in. Compared to some other materials used in high-efficiency solar cells, TMDs and phosphorene are relatively abundant and potentially cheaper to produce. This offers the possibility of developing more affordable solar cells while maintaining high efficiency. It's important to note that TMD/phosphorene heterostructures are a relatively new area of research, and achieving optimal efficiencies is still under development. However, the unique combination of tunable absorption, light trapping, and potentially lower costs make them promising candidates for future solar cell technologies.

Spintronics is a field that manipulates the spin of electrons for information processing and storage. The study of spin transport in BN-doped CrO2-graphene-CrO2 magnetic tunnel junctions (MTJs) is important for advancement in spintronics devices and can offer advantages over existing technologies. By studying spin transport in these MTJs, researchers can understand how efficiently the spin information is carried by electrons through the device. This knowledge is crucial for developing spintronic devices like magnetic random-access memory (MRAM) and spin logic devices. Tunnel Magnetoresistance (TMR) is the key property of MTJs. It refers to the change in electrical resistance depending on the relative orientation of the magnetization in the ferromagnetic electrodes. The study aims to improve TMR in these BN-doped graphene MTJs. Higher TMR translates to a larger on/off ratio in spintronic devices, leading to more efficient and reliable operation. Graphene's unique role as the central layer in the MTJ, offers potential advantages. It's a good conductor for spin-polarized currents due to its weak spin-orbit interaction. Additionally, BN doping can further manipulate its electronic properties, potentially leading to more efficient spin filtering and transport. Current MTJs often use metallic barriers which can limit spin coherence length (how far a spin can travel before losing its information). By using graphene, researchers hope to create MTJs with superior spin transport properties due to graphene's unique characteristics. Overall, studying spin transport in BN-doped CrO2-graphene-CrO2 MTJs contributes to the development of next-generation spintronic devices with potentially higher efficiency, better spin manipulation, and potentially overcoming limitations of traditional MTJs. The study paves the way for alternative MTJ designs that move beyond the traditional ferromagnet-insulator-ferromagnet structure. This opens doors for exploring new materials and functionalities not possible with conventional approaches.

STT-SOT MRAM (Magnetic Random-Access Memory) is a promising memory technology with some drawbacks. STT-SOT MTJ-Based Nonvolatile SRAM (Static Random-Access Memory) aims to address these drawbacks and offers several advantages, making it an important area of research for future memory applications. Traditional STT-MRAM relies on a high current to write data, which can also disturb the data stored in nearby cells during read operations. This is a major limitation for high-density memory applications. Integrating traditional MRAM with CMOS (Complementary Metal-Oxide-Semiconductor) logic circuits, the workhorse of modern electronics, can be challenging due to their different operating principles. STT-SOT MTJ-Based Nonvolatile SRAM combines the non-volatility of MRAM (data retention even without power) with the faster read write times and simpler integration of SRAM. This technology has the potential to revolutionize memory design. It achieves this by using a combination of Spin-Transfer Torque (STT) and Spin-Orbit Torque (SOT) switching mechanisms within the Magnetic Tunnel Junction (MTJ). It has a potential for lower power consumption compared to traditional SRAM due to the non-volatile nature of STT-SOT MTJ. This is because data doesn't need to be constantly refreshed like in volatile SRAM. STT-SOT offers potentially faster write times compared to traditional MRAM, making it more competitive with SRAM for certain applications. Overall, STT-SOT MTJ-Based Nonvolatile SRAM has the potential to bridge the gap between highdensity, non-volatile MRAM and faster, lower-power SRAM. This could lead to higher density memory solutions due to reduced read disturbance with SRAM-like performance with non-volatile storage.

Dr Choudhary possesses a valuable and unique skillset with knowledge and research publications in both material science and electrical engineering. With these combined skills, he is not just an engineer or a material scientist, but an innovator who can bridge the gap between material possibility and electrical functionality. This skillset allows him to work on a wider range of projects than specialists in either field alone. It enables him to involve in material discovery, device and system design, and even manufacturing processes, making him a highly adaptable professional

Google Scholar Citations

Science Citation Indexed-SCI Journal Publications (more than 80):

[1] Highly Reliable, Stable and Store Energy efficient 8T/9T-2D-2MTJ NVSRAMs, S. Tripathi, S. Choudhary and P. K. Misra,  IEEE Transactions on Nanotechnology, December 2023. DOI: 10.1109/TNANO.2023.3345304

{SCI Impact Factor: 2.485}

[2] Density functional characterization of electronic and optical properties of strontium titanate under doping and strain for optoelectronic applications, Ashish Raturi, Poornima Mittal, Sudhanshu Choudhary, IEEE Transactions on Nanotechnology, 2023, doi: 10.1109/TNANO.2023.3280083.

{SCI Impact Factor: 2.917}

[3] An 8T PA Attack Resilient NVSRAM for In-Memory-Computing Applications, S. Tripathi, S. Choudhary and P. K. Misra, IEEE Transactions on Circuits and Systems I: Regular Papers, 2023, doi: 10.1109/TCSI.2023.3280193.

{SCI Impact Factor: 4.14}

[4] A Novel STT-SOT MTJ-Based Nonvolatile SRAM for Power Gating Applications, S Tripathi, Sudhanshu Choudhary, PK Misra, IEEE Transactions on Electron Devices, vol. 69, no. 3, pp. 1058-1064, March 2022, doi: 10.1109/TED.2022.3140407.

{SCI Impact Factor: 2.917}

[5] Enhanced Absorption in MoS2/Hg0.33Cd0.66T e Heterostructure for Application in Solar Cell Absorbers, Sudhanshu Choudhary and A Garg, IEEE Transactions on Nanotechnology, Vol. 18, pp. 989 - 994, 2019.

{SCI Impact Factor: 2.485}

[6] Implication of Hydrogenation in Tuning the Magnetoresistance of Graphene based Magnetic Junction, Sudhanshu Choudhary and S Khandate, IEEE Transactions on Nanotechnology, vol. 18, No. 1, pp. 670 - 675, 2019.

{SCI Impact Factor: 2.485}

[7] Thermally Assisted Magneto Resistance and Spin-Filtration in Single Layer MoS2, Sudhanshu Choudhary and S Singla, IEEE Transactions on Nanotechnology, Vol. 18, No. 1, pp. 462-472, 2019.

{SCI Impact Factor: 2.485}

[8] Tuning the optical properties of zinc sulfide (ZnS) Nanotube , G Yadav and Sudhanshu Choudhary, IEEE Transactions on Nanotechnology, 2018, Vol. 17, No. 4, pp. 807-813, 2018.

{SCI Impact Factor: 2.485}

[9] MoS2 / Phosphorene Heterostructure for Optical Absorption in Visible Region, R Kochar and Sudhanshu Choudhary, IEEE Journal of Quantum Electronics , Vol .54 , Issue: 4 , pp. 7000306, Aug. 2018.

{SCI Impact Factor: 1.887} 

[10] Engineering the optical and electronic properties of metal adsorbed Ga2SSe Janus monolayer by applying biaxial tensile and compression strain, Sapna Singh, Sudhanshu Choudhary, Optical and Quantum Electronics, vol. 55, no. 7, pp. 634, 2023.

{SCI Impact Factor: 2.084}

[11] Transition metal induced-magnetization in zigzag SiCNTs, Anurag Chauhan, Kapil Sharma, Sudhanshu Choudhary, Journal of Computational Electronics, vol. pp. , 2023. 

{SCI Impact Factor: 1.807}

[12] Strain engineering for tuning the electronic and optical properties of lithium niobate for optoelectronic applications, Ashish Raturi, Poornima Mittal, Sudhanshu Choudhary, Solid State Communications, vol. 361, 115074, 2023, https://doi.org/10.1016/j.ssc.2023.115074

{SCI Impact Factor: 1.934}

[13] Effect of alkali metal adsorption over pristine Ga2STe janus monolayer in enhancing the visible region absorption, S Singh and Sudhanshu Choudhary, Micro and Nanostructures, vol. 173, 207463, 2023.

[14] Modulating the optical and electrical properties of MoSe2 (Molybdenum diselenide) and WS2 (Tungsten disulfide) monolayer by the adsorption of halogen (F, Cl, Br, I and At) atoms, Pallavie Tyagi and Sudhanshu Choudhary, Optical and Quantum Electronics, vol. 54, no. 12, pp. 1-16, 2022.

{SCI Impact Factor: 2.084}

[15] Tuning the electronic and optical properties of SrTiO3 for optoelectronic and photocatalytic applications by plasmonic-metal doping: a DFT-computation, A Raturi, P Mittal, S Choudhary, Optical and Quantum Electronics, vol. 54, no. 10, pp. 1-19, 2022.

{SCI Impact Factor: 2.084}

[16] Enhancing the optical absorption of Ga2SeTe Janus monolayer by adsorption of transition metals, S Singh and Sudhanshu Choudhary, The European Physical Journal D, Vol. 76, no. 15, 2022.

{SCI Impact Factor: 1.485}

[17] Enhanced absorption in black phosphorene on adsorption of Li and K for use in energy conversion applications, P Ranjan and Sudhanshu Choudhary, Optical and Quantum Electronics, Vol. 54, No. 143, 2022.

{SCI Impact Factor: 2.084}

[18] Tuning the electronic and optical properties of Ga2SSe janus monolayer by adsorption of metals, Sapna Singh and Sudhanshu Choudhary, Optical and Quantum Electronics Vol. 53, No. 9, pp. 1-13, 2021.

{SCI Impact Factor: 2.084}

[19] Induced magnetization in armchair and Zig-zag CNTs on adsorbing transition metals, Sudhanshu Choudhary, Nipendra Singh and Prabhat Ranjan, Journal of Magnetism and Magnetic Materials , Vol. 538, 168287, 2021.

{SCI Impact Factor: 2.993}

[20] Tuning the electronic and optical properties of molybdenite (MoS2) by adsorption of alkali metals and halogens, P Tyagi, S Choudhary, Optical Materials , Vol. 118, pp. 111248, 2021.

{SCI Impact Factor: 3.080}

[21] Tuning the electronic and optical properties of the sphalerite by adsorbing halogen and alkali metals. M Tyagi, S Choudhary, IET Optoelectronics, 2021.

{SCI Impact Factor: 2.22}

[22] First principles study on copper and iridium co-doped SrTiO 3 for shifting the optical absorption into visible region, MS Bandaru, S Choudhary, SN Applied Sciences , Vol. 2 , pp. 1-8, 2020.

{SCI Impact Factor: }

[23] Enhanced magnetoresistance in hydrogen-and fluorine-passivated zigzag aluminium nitride nano-ribbon, S Choudhary, M Kumar, The European Physical Journal Plus Vol. 135, pp. 1-10, 2020

{SCI Impact Factor: 3.911}

[24] Visible region absorption in TMDs/phosphorene heterostructures for use in solar energy conversion applications, A Maniyar, S Choudhary, RSC Advances , Vol. 10 (53), pp. 31730-31739, 2020.

{SCI Impact Factor: 3.070}

[25] Enhanced Absorption in MoS2/Hg0.33Cd0.66Te Heterostructure for Application in Solar Cell Absorbers, Sudhanshu Choudhary and A Garg, IEEE Transactions on Nanotechnology, Vol. 18, pp. 989-994, 2019.

{SCI Impact Factor: 2.485}

[26] Implication of Hydrogenation in Tuning the Magnetoresistance of Graphene based Magnetic Junction, S Choudhary, S Khandate, IEEE Transactions on Nanotechnology, Vol. 18, pp. 670-75, 2019.

{SCI Impact Factor: 2.485}

[27] Thermally Assisted Magneto Resistance and Spin-Filtration in Single Layer MoS2, S Choudhary, S Singla, IEEE Transactions on Nanotechnology Vol. 18, pp. 467-472, 2019.

{SCI Impact Factor: 2.485}

[28] Understanding the Spin Transport in H2O-Adsorbed CNT-Based Magnetic Tunnel Junction, M Saini, S Choudhary, Journal of Superconductivity and Novel Magnetism, Vol. 32, No. 4, pp. 925-929, 2019.

{SCI Impact Factor: 1.506}

[29] Temperature dependent spin transport investigations in single layer VTe2, V Musle, A Kumar, S Choudhary, Journal of Alloys and Compounds, Vol. 770, pp. 345-349, 2019.

{SCI Impact Factor: 3.779}

[30] Spin pumping in the Heusler alloy heterostructure: Ferromagnetic resonance experiment and theory, S Husain, A Kumar, P Kumar, A Kumar, V Barwal, N Behera, S Choudhary, Physical Review B, Vol. 98 (18), pp. 180404, 2018.

{SCI Impact Factor: 3.836}

[31] Enhanced Magnetoresistance in In-Plane Monolayer MoS2 with CrO2 Electrodes, A Kumar, S Choudhary, Journal of Superconductivity and Novel Magnetism, Vol. 31, No. 10, pp. 3245-3250, 2018.

{SCI Impact Factor: 1.506}

[32] Effects of functionalization of carbon nanotubes on its spin transport properties, S Meena, S Choudhary, Materials Chemistry and Physics, Vol. 217, pp. 175-181, 2018.

{SCI Impact Factor: 2.210}

[33] Study of Effect of Bended Graphene on Its Magnetoresistance and Spin Filtration, AK Singh, S Choudhary, S Meena, Journal of Superconductivity and Novel Magnetism, Vol. 31, No. 9, pp. 2753-27585, 2018.

{SCI Impact Factor: 1.506}

[34] MoS2/Phosphorene Heterostructure for Optical Absorption in Visible Region, R Kochar, S Choudhary, IEEE Journal of Quantum Electronics, Vol. 54, No. 4, pp. 1-6, 2018.

{SCI Impact Factor: 1.887}

[35] Tuning the optical properties of phosphorene by adsorption of alkali metals and halogens, V Musle, S Choudhary, Optical and Quantum Electronics, Vol. 50, No. 7, pp. 1-15, 2018.

{SCI Impact Factor: 2.084}

[36] Tuning the Optical Properties of Zinc Sulfide Nanotube,, G Yadav, S Choudhary, IEEE Transactions on Nanotechnology, Vol. 17, No. 4, pp. 807-813, 2018

{SCI Impact Factor: 2.485}

[37] Spin Transport Investigations in Bilayer Graphene, M Singh, S Choudhary, Journal of Superconductivity and Novel Magnetism, Vol. 31, No. 1, pp. 75-79, 2018.

{SCI Impact Factor: 1.506}

[38] Tuning the tunneling magnetoresistance by using fluorinated graphene in graphene based magnetic junctions, S Meena, S Choudhary, AIP Advances Vol. 7, No. 12, 125008, 2017.

{SCI Impact Factor: 1.568}

[39] Understanding the Effect of Twisting Graphene Sheet on Its Magnetoresistance and Spin Filtration Properties, AK Singh, S Choudhary, S Smith, Journal of Superconductivity and Novel Magnetism, Vol. 30, No. 12, pp. 3497-3501, 2017.

{SCI Impact Factor: 1.506}

[40] Changes in transconductance (gm) and Ion/Ioff with high-K dielectrics in MX2 monolayer 10 nm channel double gate n-MOSFET, SP Kumar, P Sandeep, S Choudhary, Superlattices and Microstructures , Vol. 111, pp. 642-648, 2017.

{SCI Impact Factor: 2.123}

[41] Spin transport in carbon nanotubes bundles: An ab-initio study, S Meena, S Choudhary, Physics Letters A , Vol. 381, No. 39, pp. 3431-3439, 2017.

{SCI Impact Factor: 2.066}

[42] Current saturation and kink effect in zero-bandgap double-gate silicene field-effect transistors, N Patel, S Choudhary, Superlattices and Microstructures , Vol. 110, pp. 155-161, 2017.

{SCI Impact Factor: 2.123}

[43] Effect of twisting and stretching on magneto resistance and spin filtration in CNTs, AK Singh, S Choudhary, Magnetochemistry , Vol. 3, pp. 1-8, No. 3, 2017.

{SCI Impact Factor: 2.193}

[44] First-Principle Study of Effects of Magnesium Oxide Adsorption in SiCNT-Based Magnetic Tunnel Junction, G Choudhary, S Choudhary, Journal of Superconductivity and Novel Magnetism, Vol. 30, No. 8, pp. 2303-2308, 2017.

{SCI Impact Factor: 1.506}

[45] Understanding the Spin Transport in MgO–HfO2 Bilayer Insulating Barrier Magnetic Tunnel Junction, S Choudhary, S Harode, C Dhopte, Journal of Nanoelectronics and Optoelectronics, Vol. 12, No. 7, pp. 661- 665, 2017 ISSN: 1555-1318

{SCI Impact Factor: 0.961}

[46] First principles study on transport characteristics of SiCNT-based field effect transistor, S Choudhary, A Chauhan, International Journal of Electronics Letters, Vol. 5 , No. 2, pp. 246-254, 2017

[47] Improving the subthreshold performance of junctionless transistor using spacer engineering, G Saini, S Choudhary, Microelectronics Journal, Vol. 59, pp. 55-58, 2017.

{SCI Impact Factor: 1.405}

[48] Enhancing TMR and spin-filtration by using out-of-plane graphene insulating barrier in MTJs, S Meena, S Choudhary, Physical Chemistry Chemical Physics, Vol. 19, No. 27, pp. 17765-17772, 2017.

{SCI Impact Factor: 4.449}

[49] Maneesha Singh and Sudhanshu Choudhary, “Spin Transport Investigations in Bilayer Graphene,” J Superconductivity and Novel Magnetism (Springer), vol. , no. , 2017. (accepted)

{SCI Impact Factor: 1.506}

[50] AK Singh, Sudhanshu Choudhary and S Smith, " Understanding the effect of twisting graphene sheet on its magneto resistance and spin filtration properties," J Superconductivity and Novel Magnetism (Springer), vol. , no. , 2017. (accepted)
 

{SCI Impact Factor: 1.506}

[51] Neeraj and Sudhanshu Choudhary, " Spin Transport in H2O Adsorbed SiCNT Based Magnetic Tunnel Junction Using Half Metallic Ferromagnetic Electrodes," J Nanoengineering and Nanomanufacturing, American Scientific Publishers, USA, vol. , no. , pp. , 2017.

[52] Garima Choudhary and Sudhanshu Choudhary, " First-Principles Study of Effects of Magnesium Oxide Adsorption in SiCNT-Based Magnetic Tunnel Junction," J Superconductivity and Novel Magnetism (Springer), vol. , no. , 2017. DOI: 10.1007/s10948-017-4041-5

{SCI Impact Factor: 1.506}

[53] G. Saini and S. Choudhary, "Improving the subthreshold performance of junctionless transistor using spacer engineering," Microelectronics Journal (Elsevier), vol. 59, pp. 55-58, 2017.

{SCI Impact Factor: 1.405}

[54] G. Saini and S. Choudhary, "Analog/RF performance of source-side only dual-k sidewall spacer trigate junctionless transistor with parametric variations," Superlattices and Microstructures (Elsevier), vol. 100, pp. 757-766, 2016.

{SCI Impact Factor: 2.117}

[55] G. Saini and S. Choudhary, "Improving the performance of SRAMs using asymmetric junctionless accumulation mode (JAM) FinFETs," Microelectronics Journal (Elsevier),vol. 58, pp. 1-8, 2016.

{SCI Impact Factor: 1.405}

[56] Sudhanshu Choudhary, C Dhopte and S Harode, "Understanding the Spin Transport in MgO-HfO2 Bilayer Insulating Barrier Magnetic Tunnel Junction," J Nanoelectronics and Optoelectronics, American Scientific Publishers, USA, vol. , no. , pp. , 2016.

{SCI Impact Factor: 0.961}

[57] A Raturi and Sudhanshu Choudhary, "Simulation study on understanding the Spin Transport in MgO adsorbed Graphene based Magnetic Tunnel Junction," SPIN (World Scientific Publishers), vol. 06, 1650011, 2016.

{SCI Impact Factor: 1.439}

[58] Alok K Singh and Sudhanshu Choudhary, "Understanding the Spin Transport in H2O-Adsorbed GrapheneBased Magnetic Tunnel Junction," J Superconductivity and Novel Magnetism (Springer), vol. , no. , 2016.

{SCI Impact Factor: 1.506}

[59] G. Saini and S. Choudhary, "Investigation of trigate JLT with dual-k sidewall spacers for enhanced analog/RF FOMs," Journal of Computational Electronics (Springer), vol. 15, pp. 865-873, 2016.

{SCI Impact Factor: 1.807}

[60] Sudhanshu Choudhary, Pradeep Mishra and Rohit goyal, "First-Principles Study of Spin Transport in BN Doped CrO2-Graphene-CrO2 Magnetic Tunnel Junction," Physics Letters A (Elsevier), vol. 380, no. 9-10, pp. 1098-1101, 2016.

{SCI Impact Factor: 2.654}

[61] Sudhanshu Choudhary and Abhishek Chauhan, "First principles study on transport characteristics of SiCNTbased field effect transistor," International Journal of Electronics (Taylor and Francis), pp. 1-9, 2016.

{SCI Impact Factor: 0.5}

[62] Sudhanshu Choudhary and Divya Kaushik, "Understanding the Effect of Vacancy Defects on Spin Transport in CrO2-Graphene-CrO2 Magnetic Tunnel Junction," Modern Physics Letters B, (World Scientific Publication), vol. , no., pp. , 2015. (Accepted)

{SCI Impact Factor: 1.224}

[63] Gaurav Saini and Sudhanshu Choudhary, "Asymmetric Dual-k Spacer Trigate FinFET for Enhanced Analog/RF Performance," J Comput Electron, vol. , no., pp. , 2015. (Accepted)

{SCI Impact Factor: 1.807}

[64] Sudhanshu Choudhary and Vikram Singh, "Understanding the Effect of n-type and p-type Doping in the Channel of Graphene Nanoribbon Transistor," Bulletin of Materials Science, vol. , no. , pp. , 2015. (Accepted)

{SCI Impact Factor: 1.841}

[65] Sudhanshu Choudhary and Rohit Goyal, “First-Principles Study of Spin Transport in CrO2-GrapheneCrO2Magnetic Tunnel Junction,” J Supercond Nov Magn, vol. 29, pp. 139-143, 2015.

{SCI Impact Factor: 1.506}

[66] Sudhanshu Choudhary and Devendra Upadhyay, "Understanding the Impact of Graphene Sheet Tailoring on the Conductance of GNRFETs," Bulletin of Materials Science, vol. 38, no. 7, pp. 1705-1709, 2015.

{SCI Impact Factor: 1.841}

[67] Sudhanshu Choudhary and Anurag Chauhan, “First-Principles Study of Spin Transport in CrO2-SiCNTCrO2 Magnetic Tunnel Junction," J Comput Electronics, vol. 14, no. 3, pp. 852-856, 2015.

{SCI Impact Factor: 1.807}

[68] Sudhanshu Choudhary and Mayur Varshney, “First-Principles Study of Spin Transport in CrO2-CNT-CrO2 Magnetic Tunnel Junction,” J Supercond Nov Magn, vol. 28, pp. 3141-3145 , 2015.

{SCI Impact Factor: 1.506}

[69] Sudhanshu Choudhary and Surendra Jalu, " First-principles study of spin transport in Fe–SiCNT–Fe magnetic tunnel junction," Physics Letters A (Elsevier), vol. 379, Issues 28–29, Pages 1661–1665, 2015.

{SCI Impact Factor: 2.654}

[70] Sudhanshu Choudhary, Gaurav Saini and S. Qureshi, " Impact of Radial Compression on the Conductance of Carbon Nanotube Field Effect Transistors,"Modern Physics Letters B, (World Scientific Publication),vol. 28, no.2, pp. 1-9,2014.

{SCI Impact Factor: 1.224}

[71] S. Choudhary and S. Qureshi, “Theoretical Study on the Effect of Dopant Positions and Dopant Density on Transport Properties of a BN Co-Doped SiC nanotube,” Physics Letters A (Elsevier), vol. 377, no. 5, pp. 430- 435, 2013.

{SCI Impact Factor: 2.654}

[72] S. Choudhary and S. Qureshi, “Effect of Moisture on Electron Transport in Si-C Nanotubes: an ab-initio study,” Physics Letters A (Elsevier), vol. 376, no. 45, pp. 3359-3362, 2012.

{SCI Impact Factor: 2.654}

[73] S. Choudhary and S. Qureshi, “Theoretical Study on Transport Properties of a BN Doped SiC nanotube,” Physics Letters A (Elsevier), vol. 375, no. 38, pp. 3382-3385,2011.

{SCI Impact Factor: 2.654}

[74] Sudhanshu Choudhary and S. Qureshi, “Inductance Modelling of SWCNT Bundle Interconnects using Partial Element Equivalent Circuit Method,” Journal of Computational Electronics (Springer), vol. 10, no.1-2, pp. 241-
247, 2011.

{SCI Impact Factor: 1.807}

[75] S. Choudhary and S. Qureshi, “Theoretical Study on The Effect of Radial and Axial Deformation on Electron transport Properties in a Semiconducting Si-C Nanotube,” Bulletin of Material Science, (Springer), vol. 35,
no.5, 2012.

{SCI Impact Factor: 1.841}

[76] Sudhanshu Choudhary and S. Qureshi, "Theoretical Study on the Effect of Vacancy Defect Reconstruction on Electron Transport in Si-C Nanotubes," Modern Physics Letters B, (World Scientific Publication),vol. 25 no. 28, pp. 1-12, 2011.

{SCI Impact Factor: 1.224}

[77] Sudhanshu Choudhary and S. Qureshi, “Power Aware Channel Width Tapering of Serially Connected MOSFETs", Analog Integrated Circuits and Signal Processing (Springer), vol. 70, no. 3, pp. 370 - 383, 2012.

{SCI Impact Factor: 1.337}

[78] Sudhanshu Choudhary and S. Qureshi, “Performance Evaluation for Mesh-based NoCs: Implementation of a New Architecture and Routing Algorithm,” International Journal of Automation and Computing (Springer), vol. 9, no. 3,2012.

{SCI Impact Factor: }

[79] A Raturi, P Mittal and Sudhanshu Choudhary, “Electronic and optical properties of lithium niobate ( LiNbO3 ) under tensile and compressive strain for optoelectronic applications: Insights from DFT-computations,” Materials Science in Semiconductor Processing, vol. 144, no. 3, pp. 106606 (1-10), June 2022.

{SCI Impact Factor: 3.927}

NOTE: Journal impact factor is as available in 2021-22

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International Conference Publications:

[80] POWER AWARE CHANNEL WIDTH TAPERING OF SERIALLY CONNECTED MOSFETS, IEEE-INTERNATONAL CONFERENCE ON MICROELECTRONICS (ICM) CAIRO-EGYPT, PP. 399-402, 2007. DOI: 10.1109/ICM.2007.4497738.

[81] LIFE TIME ISSUES IN ORGANIC LIGHT EMITTING DIODES, IEEE-TENCON 2008 - 2008 IEEE REGION 10 CONFERENCE, 2008, PP. 1-4, DOI: 10.1109/TENCON.2008.4766504

[82] A NEW NOC ARCHITECTURE BASED ON PARTIAL INTERCONNECTION OF MESH NETWORKS, 2011 IEEE SYMPOSIUM ON COMPUTERS & INFORMATICS, 2011, PP. 334-339, DOI: 10.1109/ISCI.2011.5958937

[84] MOISTURE ASSISTED ELECTRON TRANSPORT IN SI-C NANOTUBES: AN AB-INITIO STUDY, NANOTECH SANTA CLARA-CA, 2012, PP. 318-321.

[85] FAULT AWARE ADAPTIVE ROUTING ALGORITHM FOR MESH BASED NOC, IEEE - INTERNATIONAL CONFERENCE ON INVENTIVE COMPUTING AND INFORMATICS (ICICI), 2017, PP. 584-589, DOI: 10.1109/ICICI.2017.8365199

[86] FAULT TOLERANT DYNAMIC XY-YX ROUTING ALGORITHM FOR NETWORK ON-CHIP ARCHITECTURE, 2017 INTERNATIONAL CONFERENCE ON INTELLIGENT COMPUTING AND CONTROL (I2C2), 2017, PP. 1-6, DOI: 10.1109/I2C2.2017.8321939

[87] DESIGN OF FULLY ADAPTIVE ROUTING FOR PARTIALLY INTERCONNECTED CROSS-LINK MESH TOPOLOGY FOR NETWORK ON CHIP, 2017 INTERNATIONAL CONFERENCE ON INTELLIGENT COMPUTING AND CONTROL (I2C2), 2017, PP. 1-6, DOI: 10.1109/I2C2.2017.8321939

[88] PERFORMANCE EVALUATION OF CROSS LINK FULLY ADAPTIVE ROUTING ALGORITHM WITH CROSS LINK ARCHITECTURE FOR NETWORK ON CHIP, 2017 INTERNATIONAL CONFERENCE ON INVENTIVE COMPUTING AND INFORMATICS (ICICI), 2017, PP. 576-583, DOI: 10.1109/ICICI.2017.8365198

[89] Analysis & Comparison of Digital to Analog Converter in Different CMOS Technology, 2018 Second International Conference on Intelligent Computing and Control Systems (ICICCS) 14-15 June 2018 Madurai, India.

[90] A Study of 1.6 V Voltage Regulator from 2.5 V Supply Using 1.8 V Devices In 14-nm FinFET Technology, 2018 International Conference on Emerging Trends and Innovations In Engineering And Technological Research (ICETIETR) 11-13 July 2018 Ernakulam, India.

[91] A Comparison between MOSFET based and CNTFET based Analog to Digital Converter, 2018 International Conference on Recent Innovations in Electrical, Electronics & Communication Engineering (ICRIEECE), 27-28 July 2018, Bhubaneswar, India. 

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International Book Chapters:

[92] Impact of Defects and Doping on Electron Transport in SiCNTs, Silicon-based Nanomaterials, vol. 187, pp. 243-264, 2013, Springer New York.

[93] Design and Simulation of CNTFET by Varying the Position of Vacancy Defect in Channel, Intelligent Computing, Communication and Devices, pp. 545-551, 2015, Springer.

• Nominated for an "Outstanding Graduate/Professional Teaching Award-2024" at University of North Dakota
• 2023-2024 CEM Faculty and Staff of the Year award (runner up) at University of North Dakota

PhD: Indian Institute of Technology Kanpur, Electrical Engineering, 2013.
'Simulation studies on understanding the effect of defects, doping and moisture on electronic properties of silicon carbide nanotubes'

Masters: Indian Institute of Information Technology & Management Gwalior, VLSI Design, 2006.
'Algorithms for board level interconnect testing'

Bachelors: Birla Institute of Technology MESRA Ranchi-India, Electronics and Communication Engineering, 2002.

Instructor of ELectrical Engg (Jan 2023 - present) at University of North Dakota-US, School of Electrical Engg and Computer Science.

Assistant Professor (March 2013 – Dec. 2022) at National Institute of Technology Kurukshetra-India, Department of Electronics & Communication Engineering,

Assistant Professor since Dec. 2012 – March 2013) at National Institute of Technology Silchar-India, Department of Electronics & Communication Engineering.

Graduate Teaching Assistant Jan. 2007 – Dec. 2011 at Indian Institute of Technology Kanpur, Department of Electrical Engineering.

My wife is a science graduate and is a homemaker. My daughter Samriddhi is 12 years young and studies in grade-7. Abhinav is the youngest member of my family, he is my son and he is 3 years young.